BlockBeats News, July 1st, following the world's first mass production of HBM4 (sixth generation), Samsung Electronics has made progress in HBM4E (seventh generation) and next-generation DRAM development. Song Jae-hyuk, CTO of Samsung Electronics' DS division and Director of the Semiconductor Institute, stated during an internal operational status briefing on June 30th that the reliability test yield of HBM4E has exceeded 70%. The industry usually considers a yield of over 80% to indicate entry into the "mature yield" stage of the process stability. Considering that HBM4E is still in the reliability testing phase, a yield of over 70% is seen as an indicator that the development is entering a stable range.

In February of this year, Samsung Electronics was the first to mass produce HBM4 and publicly released detailed technical specifications for the HBM4E 12-layer product on May 29th, shipping samples to key customers. HBM4 will be used in NVIDIA's AI accelerator Vera Rubin scheduled for the second half of this year, while HBM4E is expected to be used in NVIDIA's next year's next-generation AI accelerator Vera Rubin Ultra and other products.

Samsung's next-generation DRAM process development is also progressing smoothly. Song Jae-hyuk believes that the D1d process technology has a competitive advantage over competitors and is aiming to receive production approval by November as a target for development. D1d is the core DRAM process that Samsung plans to apply from the next-generation HBM5 (eighth generation). If the plan progresses as intended, it will have a positive impact on the competitiveness of next-generation DRAM and subsequent HBM5 products. (Fnnews)