SK Hynix Initiates Development of 3D Stacked DRAM, Expanding into Edge AI Storage Technologies

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BlockBeats News, July 24th, SK Hynix is accelerating the development of the next-generation DRAM technology aimed at edge AI—3D Stacked DRAM. It is reported that the company has recently initiated a talent recruitment plan and intends to collaborate with American customers to jointly design relevant technologies.

3D Stacked DRAM design is a next-generation semiconductor technology that involves directly stacking memory chips on top of a logic semiconductor (system semiconductor). The industry expects that in the era of physical AI following generative AI, this type of technology will become the core semiconductor solution for edge AI devices.

SK Hynix is currently recruiting 3D Stacked DRAM design engineers through its Americas subsidiary in San Jose, USA, to advance the related technology development.

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ソース：BlockBeats

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